Title :
Application of TSV integration and wafer bonding technologies for hermetic wafer level packaging of MEMS components for miniaturized timing devices
Author :
Zoschke, K. ; Manier, C.-A. ; Wilke, M. ; Oppermann, H. ; Ruffieux, D. ; Dekker, J. ; Jaakkola, A. ; Dalla Piazza, S. ; Allegato, G. ; Lang, K.-D.
Author_Institution :
Fraunhofer IZM, Berlin, Germany
Abstract :
The paper presents different approaches for hermetic wafer level packaging of oscillator components like quartz crystals or silicon resonators. The proposed concepts involve technologies like TSV formation into passive or active silicon wafers, formation of proper bond frames on interposer, ASIC or cap wafers as well as hermetic bonding using AuSn soldering either in wafer to wafer style or with reconfigured components on a carrier wafer.
Keywords :
application specific integrated circuits; gold compounds; micromechanical devices; silicon; soldering; three-dimensional integrated circuits; timing circuits; wafer bonding; wafer level packaging; ASIC; AuSn; MEMS components; Si; TSV integration; active wafers; bond frames; cap wafers; carrier wafer; hermetic wafer level packaging; miniaturized timing devices; oscillator components; passive wafers; quartz crystals; resonators; soldering; wafer bonding technology; wafer to wafer style; Bonding; CMOS integrated circuits; Gold; Packaging; Silicon; Through-silicon vias; Wafer bonding;
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
DOI :
10.1109/ECTC.2015.7159772