DocumentCode :
3178568
Title :
Plasma assisted multichip-to-wafer direct bonding technology for self-assembly based 3D integration
Author :
Hashiguchi, H. ; Yonekura, H. ; Fukushima, T. ; Murugesan, M. ; Kino, H. ; Lee, K.-W. ; Tanaka, T. ; Koyanagi, M.
Author_Institution :
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
1458
Lastpage :
1463
Abstract :
We demonstrated plasma-assisted multichip-to-wafer direct bonding for self-assembly based 3D integration processes. We mainly evaluated the bonding yields and bonding strengths of dies obtained by multichip-to-wafer direct oxide-oxide bonding, and compared with wafer-to-wafer direct oxide-oxide bonding in their bonding properties. In this study, we employed thermal oxide and chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PECVD) with tetraethyl orthosilicate (TEOS) as bonding interfaces, and in addition, N2 or Ar plasmas were used for the surface activation. We finally introduce multichip-to-wafer direct oxide-oxide bonding between self-assembled dies and wafers having the PECVD-oxide layer.
Keywords :
argon; chemical mechanical polishing; nitrogen; plasma CVD; self-assembly; wafer bonding; 3D integration processes; Ar; CMP-treated oxide; N2; PECVD; bonding interfaces; bonding strengths; bonding yields; chemical mechanical polishing; direct oxide-oxide bonding; plasma assisted multichip-to-wafer direct bonding technology; plasma-enhanced chemical vapor deposition; self-assembly; surface activation; tetraethyl orthosilicate; thermal oxide; Bonding; Large scale integration; Plasmas; Self-assembly; Stacking; Surface treatment; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159789
Filename :
7159789
Link To Document :
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