Title :
Novel WO3 nanoparticles modified electroless metallization to retard interfacial reaction and reinforce the reliability of solder interconnection
Author :
Xiao Hu ; Chan, Y.C.
Author_Institution :
City Univ. of Hong Kong, Kowloon Tong, China
Abstract :
The role of under bump metallization becomes more important to control the sharp interfacial reaction. In the study, a Ni-P-WO3 composite layer was developed as a novel UBM for solder interconnection. It´s the first time tungsten oxide nanoparticles been used in solder metallization to reinforce the joint. After surface treatment, magnetic stirring and ultrasonically processing, the uniform distribution of WO3 nanoparticles was proved by SEM and XRD analysis. The conventional Ni-P layer was used for comparison. Microstructure evolution shows solder/Ni-P-WO3 joint has successfully slowed down the IMC growth rate at interface under various aging conditions. WO3 nanoparticles act as barrier to limit the atom inter-diffusion, result in controlled IMC spalling and less voids formation. Top-view IMC grains shows a finer structure on Ni-P-WO3 UBM. The activation energy of IMC growth in solder/Ni-P-WO3 calculated to be 47.2 KJ/mol, which is higher than that of plain solder joint. The alleviation of interfacial reaction is explained by the schematic diffusional mechanism in detail. With the incorporation of WO3 nanoparticles, mechanical properties like shear strength and tensile strength of the solder joints have been improved. Ni-P-WO3 UBM in solder interconnection with reinforced reliability is proved to be a potential replacement for conventional UBM for advanced electronic packaging, even can be extend to micro-bump in 3D packaging bonding.
Keywords :
X-ray diffraction; metallisation; nanoparticles; nickel; phosphorus; reliability; scanning electron microscopy; shear strength; solders; surface treatment; tensile strength; tungsten compounds; 3D packaging bonding; IMC growth rate; Ni-P-WO3 composite layer; Ni-P-WO3; SEM; UBM; XRD analysis; activation energy; advanced electronic packaging; atom inter-diffusion; controlled IMC spalling; interfacial reaction alleviation; magnetic stirring; micro-bump; microstructure evolution; reinforced reliability; schematic diffusional mechanism; shear strength; solder interconnection; solder metallization; surface treatment; tensile strength; top-view IMC grains; tungsten oxide nanoparticles; ultrasonically processing; under bump metallization; voids formation; Aging; Joints; Metallization; Microstructure; Nanoparticles; Nickel; Soldering;
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
DOI :
10.1109/ECTC.2015.7159790