IGBT protection by fuse calculation, behavior and connection

Author

Duong, S. ; Schanen, J.L. ; Schaeffer, C. ; Sarrus, F. ; De Palma, J.F.

Author_Institution

Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

1228

Abstract

The case of the power IGBT may violently explode when the device is in short circuit mode. As the power of the IGBT increases, there is more and more a need for special fast acting fuses for the protection of the IGBT. Studies and power tests show that a specially designed fuse can prevent the IGBT from exploding and keep the circuit impedance below acceptable values. Since the IGBT can operate at frequencies higher than 10 kHz it becomes necessary to evaluate how it can affect the current carrying capability of the fuses. The appropriate curves, data and fuse calculation method are absolutely necessary to allow an accurate fuse selection for the protection against explosion of the IGBT

Keywords

electric fuses; explosions; insulated gate bipolar transistors; power bipolar transistors; protection; semiconductor device models; semiconductor device testing; circuit impedance; current carrying capability; explosion protection; fast acting fuses; fuse selection; power IGBT protection; Circuit testing; Conducting materials; Conductors; Explosions; Frequency; Fuses; Geometry; Inductance; Insulated gate bipolar transistors; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.629016

Filename

629016