DocumentCode :
3178930
Title :
Micro-Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips
Author :
Shao, Wensheng ; Ding, Ming Q. ; Chen, Changqing ; Li, Xinghui ; Bai, Guodong ; Feng, Jin Jun
Author_Institution :
Beijing Vacuum Electron. Res. Inst., Beijing
fYear :
2007
fDate :
15-17 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Using our approach previously reported, we have fabricated relatively large area micro-gated-field emission arrays with carbon nanotube (CNT) grown on Mo tips. By redesigning the device and fabrication processes, the percentage of single CNTs increased to about 50-70% with a substantial improvement in leakage current between gate and cathode and gate interceptive current. The I-V measurement of a 11000 cell array at a gate-to cathode voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm2, with a gate current only 3.3% of the anode current.
Keywords :
carbon nanotubes; field emitter arrays; leakage currents; molybdenum; nanolithography; nanotube devices; C-Mo; anode current; current 1.2 mA; fabrication process; gate-to-cathode voltage; leakage current; lithography; micro-gated-field emission array; single carbon nanotubes; voltage 92 V; Anodes; Apertures; Carbon nanotubes; Cathodes; Diodes; Electron beams; Fabrication; Lithography; Telephony; Thickness measurement; conventional lithography; micro-gated field emission arrays; single carbon nanotube emitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, 2007. IVEC '07. IEEE International
Conference_Location :
Kitakyushu
Print_ISBN :
1-4244-0633-1
Type :
conf
DOI :
10.1109/IVELEC.2007.4283285
Filename :
4283285
Link To Document :
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