DocumentCode
3178961
Title
Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon
Author
Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori
Author_Institution
Hachinohe Inst. of Technol., Hachinohe
fYear
2007
fDate
15-17 May 2007
Firstpage
1
Lastpage
2
Abstract
A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.
Keywords
MOS integrated circuits; cathodes; electron emission; laser ablation; nanostructured materials; nanotechnology; electron emission; gate electrode; metal-oxide-semiconductor cathodes; nanocrystalline silicon; pulsed laser ablation; Cathodes; Electrodes; Electron emission; Gold; Laser ablation; Low voltage; Nanoelectronics; Optical pulses; Silicon; Tunneling; MOS cathode; field emission; nanocrystalline silicon; tunnel emission; vacuum nanoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2007. IVEC '07. IEEE International
Conference_Location
Kitakyushu
Print_ISBN
1-4244-0633-1
Type
conf
DOI
10.1109/IVELEC.2007.4283287
Filename
4283287
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