Title :
Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon
Author :
Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori
Author_Institution :
Hachinohe Inst. of Technol., Hachinohe
Abstract :
A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.
Keywords :
MOS integrated circuits; cathodes; electron emission; laser ablation; nanostructured materials; nanotechnology; electron emission; gate electrode; metal-oxide-semiconductor cathodes; nanocrystalline silicon; pulsed laser ablation; Cathodes; Electrodes; Electron emission; Gold; Laser ablation; Low voltage; Nanoelectronics; Optical pulses; Silicon; Tunneling; MOS cathode; field emission; nanocrystalline silicon; tunnel emission; vacuum nanoelectronics;
Conference_Titel :
Vacuum Electronics Conference, 2007. IVEC '07. IEEE International
Conference_Location :
Kitakyushu
Print_ISBN :
1-4244-0633-1
DOI :
10.1109/IVELEC.2007.4283287
