Title :
Time-domain numerical model for asymmetrical multiple-quantum well traveling-wave semiconductor optical amplifiers
Author :
Lysak, V.V. ; Sukhoivanov, I.A. ; Shulika, A.V. ; Kawaguchi, Hitoshi
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Ukraine
Abstract :
In this paper, the new model for asymmetrical multiple-quantum well traveling-wave semiconductor optical amplifiers (AMQW SOA) is proposed. Numerical model based on this theory is realized in a computer simulator implemented in Simulink for Matlab. The dynamics in device are described by rate equations systems for electron and photon concentration in each QW. The model contains a material parameters base for all of the binary III-V semiconductor materials. It is shown that at equal amplification of signal, AMQW have more wide spectral bandwidth.
Keywords :
III-V semiconductors; digital simulation; numerical analysis; quantum well devices; semiconductor optical amplifiers; semiconductor quantum wells; time-varying networks; travelling wave amplifiers; wavelength division multiplexing; AMQW SOA; Matlab; Simulink; binary III-V semiconductor materials; computer simulator; electron concentration; material parameters base; multiple-quantum well semiconductor optical amplifiers; photon concentration; rate equations; signal amplification; spectral bandwidth; time-domain numerical model; traveling-wave amplifiers; Computational modeling; Computer simulation; Electrons; Equations; III-V semiconductor materials; Mathematical model; Numerical models; Optical materials; Semiconductor optical amplifiers; Time domain analysis;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1313603
