Constant intermodulation loci measure for power devices using HP 8510 network analyzer

Author

Ricco, L. ; Locatelli, G.P. ; Calzavara, F.

Author_Institution

Telettra SpA, Vimercate, Italy

fYear

1988

fDate

25-27 May 1988

Firstpage

221

Abstract

The distortion level of a FET output signal is deeply affected by the radio-frequency (RF) load. A method of characterizing the intermodulation distortion (IMD) behaviour due to loading for power FET amplifier is described. An HP 8510 network analyzer in combination with commonly available measuring equipment is used to determine load reflection coefficient for various load conditions, and relating the value to constant power gain circles drawn on a Smith chart. The locus of points generated allows the selection of the appropriate load for the FET that maximizes the device linearity. An example illustrating the method is discussed.<>

Keywords

field effect transistors; intermodulation; network analysers; power transistors; solid-state microwave devices; FET output signal; HP 8510 network analyzer; Smith chart; constant power gain; device linearity; distortion level; intermodulation distortion; load reflection coefficient; loading; power devices; Distortion measurement; FETs; Gain measurement; Intermodulation distortion; Power amplifiers; Power measurement; RF signals; Radio frequency; Radiofrequency amplifiers; Reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1988., IEEE MTT-S International

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MWSYM.1988.22017

Filename

22017