• DocumentCode
    3179634
  • Title

    Studies on lead sulphide thin films deposited by photochemical method

  • Author

    Shyju, T.S. ; Gopalakrishnan, Roshan

  • Author_Institution
    Centre for Nanosci. & Nanotechnol., Sathyabama Univ., Chennai, India
  • fYear
    2013
  • fDate
    24-26 July 2013
  • Firstpage
    340
  • Lastpage
    343
  • Abstract
    Nanocrystalline lead sulphide (PbS) thin films were deposited on glass and ITO coated glass substrates by photochemical method. To improve the adhesive nature and properties the films were deposited on ITO coated substrate using photochemical deposition. The deposited films were characterized to study their structural, morphological and electrical properties. The photochemically deposited PbS thin films possess tetragonal system. The dislocation densities of the deposited thin films were evaluated from the X-ray diffraction data. High Resolution Scanning Electron Micrographs of the deposited film shows the oval shape arrangement of particles. The elemental composition of the film was confirmed by Energy Dispersive X-ray analysis. Hall measurements were carried out for the films and their electrical parameters were evaluated. The as-deposited PbS films have positive Hall coefficient, which confirms p-type conductivity.
  • Keywords
    Hall effect; IV-VI semiconductors; X-ray chemical analysis; X-ray diffraction; adhesion; dislocation density; electrical conductivity; lead compounds; liquid phase deposition; nanofabrication; nanostructured materials; photochemistry; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; Hall coefficient; Hall measurements; ITO-SiO2; PbS; X-ray diffraction; adhesive property; dislocation densities; electrical properties; energy dispersive X-ray analysis; high-resolution scanning electron micrography; morphological properties; nanocrystalline thin films; p-type conductivity; photochemical deposition; structural properties; Glass; Indium tin oxide; Standards; Growth from solutions; Photochemical method; Semiconducting lead sulphide; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4799-1377-0
  • Type

    conf

  • DOI
    10.1109/ICANMEET.2013.6609311
  • Filename
    6609311