Performance analysis of single- and multi-walled carbon nanotube based through silicon vias

Author

Alam, Arsalan ; Majumder, Manoj Kumar ; Kumari, Archana ; Kumar, Vobulapuram Ramesh ; Kaushik, Brajesh Kumar

Author_Institution

Dept. of Electron. & Commun. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India

fYear

2015

fDate

26-29 May 2015

Firstpage

1834

Lastpage

1839

Abstract

This paper presents a comparative analysis for power, delay and bandwidth performance between single- (SWCNT) and multi-walled (MWCNT) carbon nanotube bundle filled through silicon vias (TSVs). A comprehensive and accurate electrical equivalent model of CNT bundled TSV is presented that takes into account the MOS effect of silicon substrate. The transfer function of driver-TSV-load (DTL) system is obtained by representing the via line with equivalent single conductor (ESC) model of CNT bundle based TSVs. Using absolute frequency response, it is observed that the bandwidth of 10-shell MWCNT bundled TSV is larger in comparison to the SWCNT bundle, 4-shell MWCNT and 8-shell MWCNT bundle based TSVs. Moreover, a 10-shell MWCNT bundle demonstrates substantial reduction in delay and power dissipation in comparison to the SWCNT bundle based TSV.

Keywords

frequency response; multi-wall carbon nanotubes; single-wall carbon nanotubes; three-dimensional integrated circuits; transfer functions; DTL system; ESC model; MOS effect; MWCNT; SWCNT; driver-TSV-load system; equivalent single conductor model; frequency response; multiwalled carbon nanotube; silicon substrate; single-walled carbon nanotube; through silicon vias; transfer function; Analytical models; Bandwidth; Delays; Frequency response; Through-silicon vias; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/ECTC.2015.7159849

Filename

7159849