DocumentCode :
3179737
Title :
High efficiency next generation quantum dot sensitized solar cell based on VACNT and PEDOT: PSS
Author :
Muthukumar, Vishak ; Sundaram, M. Mohana ; Prabagaran, K. ; Saravanan, S.
Author_Institution :
Dept. of Nano Sci. & Technol., Nano Mater. Lab., Sivakasi, India
fYear :
2013
fDate :
24-26 July 2013
Firstpage :
464
Lastpage :
467
Abstract :
We report on a quantum dot sensitized solar cell based on Combination of VACNT/ZnO/CdSe. The electron lifetime for VACNT/ZnO/CdSe is longer than that for ZnO/CdSe combination, indicating that the charge recombination at the interface is reduced by the presence of the VACNT. A power conversion efficiency of 1.46% is achieved for the VACNT/ZnO/CdSe due to the increased surface area and longer electron lifetime. The choice of Quantum Dots in respective of properties needed for high efficiency is necessary, we had analyzed Quantum dots having better absorption coefficient for photon power per energy, resultant absorbed power was calculated from variation of Energy flux per photon energy with respect to variation of photon energy (eV). CdSe hit maximum values compared to Competitors, Moreover CdSe join hand with various Transparent Conducting layer for profession of Exciton Concentration for different Pump power pulse. Out of Respective analysis of respective combination, CdSe/VACNT credit more than that of others because of its enormous identical Structural Properties of VACNT and Quantum size effect of CdSe.
Keywords :
II-VI semiconductors; cadmium compounds; carbon nanotubes; organic semiconductors; semiconductor quantum dots; solar cells; wide band gap semiconductors; zinc compounds; C-ZnO-CdSe; PEDOT:PSS; VACNT-ZnO-CdSe; absorption coefficient; charge recombination; electron lifetime; exciton concentration; next generation quantum dot; photon energy; pump power pulse; quantum dot sensitized solar cell; quantum size effect; transparent conducting layer; Graphene; Photonics; CdSeQuantumdots; Graphene; VACNT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
Type :
conf
DOI :
10.1109/ICANMEET.2013.6609318
Filename :
6609318
Link To Document :
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