Title :
Cathodoluminescent properties of ZnSiO2:Ti thin films grown by pulse laser deposition
Author :
Kotlyarchuk, B. ; Savchuk, V. ; Oszwaldowski, M.
Author_Institution :
Pidstryhach Inst. for Appl. Problems of Mech. & Math., Nat. Acad. of Sci., Lviv, Ukraine
Abstract :
This research work is aimed to experimental investigations of cathodoluminescent (CL) parameters, optical characteristics and morphological changes of Ti-doped ZnSiO4 thin films prepared by pulsed laser deposition (PLD), as a function of deposition parameters and thermodynamic conditions. Analysis of the experimental results´ data nave shown that a key role in preparing the ZnSiO4:Ti thin films with stoichiometrical composition and good CL emission parameters play the substrate temperature, the oxygen pressure, the distance from the target to the substrate, the deposition rates and a the fluence of the laser radiation. We used a scanning electron microscope for the investigation of the morphology of films grown at the constant deposition temperature and different deposition rate.
Keywords :
cathodoluminescence; optical films; pulsed laser deposition; scanning electron microscopes; silicon compounds; thermo-optical effects; titanium; visible spectra; zinc compounds; O; ZnSiO2:Ti; ZnSiO2:Ti thin film growth; cathodoluminescent emission; cathodoluminescent properties; constant deposition temperature; deposition rate; laser radiation fluence; oxygen pressure; pulse laser deposition; scanning electron microscope; stoichiometrical composition; substrate temperature; thermodynamic condition; Optical films; Optical materials; Optical pulses; Plasma temperature; Pulsed laser deposition; Semiconductor films; Sputtering; Substrates; Surface morphology; Transistors;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1313649