DocumentCode
3180025
Title
Development of micro-patterned carbon nanotube field emission arrays for high current applications
Author
Chen, Changqing ; Shao, Wensheng ; Ding, Mingqing ; Li, Xinghui ; Bai, Guodong ; Zhang, Fuquan ; Feng, Jinjun
Author_Institution
Beijing Vacuum Electron. Res. Inst., Beijing
fYear
2007
fDate
15-17 May 2007
Firstpage
1
Lastpage
2
Abstract
This paper presents micro-patterned carbon nanotube field emission arrays cathodes with an emitting unit area only 1mum in diameter. The fabrication process began with the deposition of a buffer layer of titanium-nitride on the silicon n type(100) substrate. Then a photo-resist overlay was patterned by conventional lithography technique to form 1mum circular aperture arrays, followed by depositing iron catalyst by electron beam deposition. Finally, the resist was removed, and carbon nanotubes grown by direct current plasma enhanced chemical vapor deposition (DC- PECVD). The field emission measurements showed a turn-on field as low as IV/mum, a current density of 90mA/cm2 at a field of 17V/mum, and with a fluctuation less than 5.6 percent over a period of 3.5 hours at an average current of 550 muA..
Keywords
carbon nanotubes; catalysts; cathodes; electron beam deposition; electron beam lithography; electron field emission; iron; nitrogen compounds; plasma CVD; silicon; titanium compounds; circular aperture arrays; current 550 muA; direct current plasma enhanced chemical vapor deposition; electron beam deposition; fabrication process; field emission measurements; high current applications; iron catalyst; lithography technique; micropatterned carbon nanotube field emission arrays cathodes; photo-resist overlay; silicon; time 3.5 hour; titanium-nitride deposition; Apertures; Buffer layers; Carbon nanotubes; Cathodes; Fabrication; Field emitter arrays; Iron; Lithography; Plasma measurements; Silicon; field emission arrays cathode; micro-patterned; plasma enhanced chemical vapour deposition; well-aligned carbon-nanotube;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference, 2007. IVEC '07. IEEE International
Conference_Location
Kitakyushu
Print_ISBN
1-4244-0633-1
Type
conf
DOI
10.1109/IVELEC.2007.4283347
Filename
4283347
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