DocumentCode
3180092
Title
Fabrication of Nd:KGd(WO4)2 thin film on Si substrate by introducing CeO2 buffer layer
Author
Okato, T. ; Atanasov, P.A. ; Tomov, R.I. ; Obara, M.
Author_Institution
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
fYear
2003
fDate
22-27 June 2003
Firstpage
593
Abstract
In this paper we will describe pulsed laser deposition of Nd:KGW films on Si substrate by introducing (100 or 111) CeO2 buffer layer. The KrF excimer laser (λ=248 nm, τ=27 ns, v=20 Hz) is used for ablation. The Rutherford backscattering (RBS), X-ray diffraction (XRD) analyses, PL measurements, and waveguide propagation have been performed. The annealing at 900°C of the films has also been accomplished.
Keywords
Rutherford backscattering; X-ray diffraction; cerium compounds; elemental semiconductors; gadolinium compounds; gas lasers; krypton compounds; neodymium; optical fabrication; optical films; optical waveguides; potassium compounds; pulsed laser deposition; rapid thermal annealing; silicon; tungsten compounds; 20 Hz; 248 nm; 27 ns; 900 C; CeO2; CeO2 buffer layer; KGdW2O8:Nd; KrF; KrF excimer laser; Nd:KGW thin film fabrication; PL measurement; RBS; Rutherford backscattering; Si; Si substrate; X-ray diffraction analysis; XRD; ablation; annealing; pulsed laser deposition; waveguide propagation; Backscatter; Buffer layers; Laser ablation; Optical device fabrication; Optical pulses; Pulsed laser deposition; Semiconductor films; Waveguide lasers; X-ray diffraction; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1313655
Filename
1313655
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