Monolithic integration in InGaAs/InGaAsP multiple quantum well structures using laser and plasma processing

Precise control over local optical and electrical characteristics across a semiconductor wafer is of fundamental importance for fabrication of photonic integrated circuits (PICs). Here we report the use of two basic quantum well intermixing (QWI) techniques, laser processing and plasma processing induced disordering. Extended cavity ridge lasers were fabricated using both techniques. The light-current (L-I) characteristics of lasers with and without extended passive waveguides were measured, and it was shown that threshold current has only a slight increase for the extended cavity lasers with 1 mm extended cavity compared to the lasers with no extended cavity. The losses in the passive section of the extended cavity lasers are calculated