DocumentCode
3180122
Title
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
Author
Grider, David ; Das, Mrinal ; Agarwal, Anant ; Palmour, John ; Leslie, Scott ; Ostop, John ; Raju, Ravisekhar ; Schutten, Michael ; Hefner, Al
Author_Institution
Cree, Inc., Durham, NC, USA
fYear
2011
fDate
10-13 April 2011
Firstpage
131
Lastpage
134
Abstract
In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A SiC DMOSFETs and SiC JBS diodes is discussed. A new 10 kV/120 A SiC power module using these 10 kV SiC devices is also described which enables a compact 13.8 kV to 465/√3 solid state power substation (SSPS) rated at 1 MVA.
Keywords
power MOSFET; power semiconductor diodes; silicon compounds; substations; wide band gap semiconductors; SiC DMOSFET half H-bridge power module; SiC JBS diode; apparent power 1 MVA; current 120 A; solid state power substation; voltage 10 kV; Insulated gate bipolar transistors; Multichip modules; Schottky diodes; Silicon; Silicon carbide; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Ship Technologies Symposium (ESTS), 2011 IEEE
Conference_Location
Alexandria, VA
Print_ISBN
978-1-4244-9272-5
Type
conf
DOI
10.1109/ESTS.2011.5770855
Filename
5770855
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