Title :
Self-organized InGaAs quantum dots for advanced applications in optoelectronics
Author :
Ledentsov, N.N. ; Bimberg, D. ; Ustinov, V.M. ; Alferov, Zh.I. ; Lott, J.A.
Author_Institution :
Tech. Univ. Berlin, Germany
Abstract :
We report on fabrication of quantum dot (QDs) heterostructures for applications in optoelectronics. Different kinds of QDs are used: (i) three-dimensional quantum dots obtained by Stranski-Krastanow or Volmer-Weber growth of three-dimensional QDs in the InAs-GaAs material system, (ii) two-dimensionally-shaped QDs formed by submonolayer insertions in the InAs-GaAs and similar systems, (iii) GaAs clusters formed on corrugated (311)A AlAs surfaces, (iv) and quantum dots obtained by spinodal decomposition and activated spinodal decomposition in InGaAs-GaAs and InGaAsN-GaAs materials system. Formation of QDs uniform in size and shape is possible in all approaches and is governed, mostly, by thermodynamics. Ultrahigh modal gain can be achieved in ultradense arrays of very small quantum dots in wide gap matrices. 1.3-1.7 μm emission can be achieved using InAs-GaAs QDs. Recent advances in growth make it possible to realize GaAs 1.3 μm CW VCSEL with ~0.7 mW output power and long operation lifetime
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microcavity lasers; quantum well lasers; semiconductor growth; semiconductor quantum dots; spinodal decomposition; surface emitting lasers; 0.7 mW; 1.3 to 1.7 mum; AlAs; CW VCSEL; GaAs; GaAs clusters; InAs-GaAs; InAs-GaAs material system; InGaAs-GaAs; InGaAs-GaAs system; InGaAsN-GaAs; InGaAsN-GaAs material system; Stranski-Krastanow growth; Volmer-Weber growth; activated spinodal decomposition; corrugated (311)A AlAs surfaces; long operation lifetime; optoelectronics; output power; quantum dot heterostructures; self-organized InGaAs quantum dots; spinodal decomposition; submonolayer insertions; thermodynamics; three-dimensional quantum dots; two-dimensionally-shaped QDs; ultradense arrays; ultrahigh modal gain; wide gap matrices; Corrugated surfaces; Gallium arsenide; Indium gallium arsenide; Matrix decomposition; Optical device fabrication; Power generation; Quantum dots; Shape; Thermodynamics; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929004
