Title :
Advances in InP HEMT technology for high frequency applications
Author :
Smith, P.M. ; Nichols, K. ; Kong, W. ; MtPleasant, L. ; Pritchard, D. ; Lender, R. ; Fisher, J. ; Actis, R. ; Dugas, D. ; Meharry, D. ; Swanson, A.W.
Author_Institution :
BAE Syst., Nashua, NH, USA
Abstract :
This paper reviews the remarkable progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Despite possessing superior performance, widespread use of InP HEMTs has to date been hindered by their relatively high cost (as compared with GaAs-based devices). However, the commercialization of HEMTs with high-indium-content InGaAs channels now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4 and 6-inch)
Keywords :
III-V semiconductors; field effect MMIC; field effect analogue integrated circuits; high electron mobility transistors; indium compounds; microwave field effect transistors; reviews; 4 inch; 6 inch; InAlAs-InGaAs; InP; InP HEMT technology; InP substrate scaling; MMIC; commercialization; high frequency analog applications; high frequency applications; high-In-content InGaAs channels; metamorphic HEMTs; microwave applications; noise figure; Frequency; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Microwave amplifiers; Noise figure; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929005
