Title :
1.5-1.6 μm VCSEL for metro WDM applications
Author :
Chang-Hasnain, C.J.
Author_Institution :
Bandwidth9 Inc., Fremont, CA, USA
Abstract :
The performance of an electrically pumped, continuously tunable, single-epitaxy VCSEL emitting in the 1530-1620 nm wavelength regime is reported. The VCSELs exhibit a continuous, repeatable and hysteresis-free wavelength-tuning characteristic. Further, the VCSELs are directly modulated at 2.5 Gbps and have >45 dB side mode suppression ratio (SMSR) over the entire tuning range. The performance of such VCSELs make them highly promising for reconfigurable WDM metropolitan area networks
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser tuning; metropolitan area networks; optical modulation; optical transmitters; quantum well lasers; surface emitting lasers; wavelength division multiplexing; 1530 to 1620 nm; 2.5 Gbit/s; AlGaAs-InGaAs-InGaAlAs-InP; GaAs/AlGaAs DBR structure; InGaAs QW active region; InP; InP substrate; cantilever VCSEL; continuous repeatable hysteresis-free wavelength-tuning characteristic; direct modulation; electrically pumped continuously tunable single-epitaxy VCSEL; reconfigurable WDM metropolitan area networks; side mode suppression ratio; transmitters; tuning range; Bit error rate; Distributed Bragg reflectors; Epitaxial growth; Laser feedback; Laser tuning; Optical tuning; Substrates; Vertical cavity surface emitting lasers; Voltage; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929007
