Ultrahigh performance staggered lineup (“Type II”) InP/GaAsSb/InP NpN DHBTs

Author

Bogonesi, C.R. ; Dvorak, M.W. ; Pitts, O.J. ; Matine, N. ; Watkins, S.P.

Author_Institution

Compound Semicond. Device Lab., Simon Fraser Univ., Burnaby, BC, Canada

fYear

2001

fDate

2001

Firstpage

27

Lastpage

30

Abstract

Using a conventional emitter-up triple-mesa process, we have fabricated C-doped InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) exhibiting both f_T and f_MAX=300 GHz while maintaining a breakdown voltage BV_CEO=6 V. Our devices feature stable and well-behaved common-emitter DC and RF characteristics up to J_C=500 kA/cm² without any passivation nor heatsinking. InP/GaAsSb/InP abrupt junction DHBTs couple unprecedented performance to apparent manufacturability advantages which should enable applications well beyond 40 Gb/s and challenge InP HEMTs in the 80-100 Gb/s arena

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; 300 GHz; 40 Gbit/s; 6 V; InP-GaAsSb:C-InP; InP/GaAsSb/InP NpN DHBTs; InP/GaAsSb/InP abrupt junction DHBTs; RF characteristics; breakdown voltage; cutoff frequency; double heterojunction bipolar transistors; emitter-up triple-mesa process; manufacturability advantages; maximum oscillation frequency; stable common-emitter DC characteristics; ultrahigh performance staggered lineup; Cutoff frequency; Doping; Double heterojunction bipolar transistors; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Laboratories; MODFETs; Manufacturing; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929010

Filename

929010