Title :
InP/InGaAs/InP double heterojunction bipolar transistors with 300 GHz Fmax
Author :
Krishnan, S. ; Dahlstrom, M. ; Mathew, T. ; Wei, Y. ; Scott, D. ; Urteaga, M. ; Rodwell, M.J.W. ; Liu, W.K. ; Lubyshev, D. ; Fang, X.-M. ; Wu, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report InP/InGaAs/InP Double Heterojunction Transistors (DHBTs) with high breakdown voltages in a substrate transfer process. A device with a 400 Å thick graded base, a 500 Å chirped superlattice base-collector grade and a 2500 Å thick InP collector exhibits f τ=165 GHz and fmax=300 GHz with breakdown voltage BVCEO=6 V at a current density, Je=1·105 A/cm2. A device with a 400 Å thick graded base, a 500 Å chirped superlattice base-collector grade and a 1500 Å thick InP collector exhibits f τ=215 GHz and fmax=210 GHz with breakdown voltage BVCEO=4 V at a current density, Je=1·105 A/cm2
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; semiconductor superlattices; 210 GHz; 215 GHz; 300 GHz; 4 V; 400 to 2500 angstrom; 6 V; InP; InP collector; InP-InGaAs-InP; InP/InGaAs/InP DHBT; breakdown voltage; chirped superlattice base-collector grade; current density; double heterojunction bipolar transistors; graded base; substrate transfer process; Chirp; Current density; Dielectric substrates; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Photonic band gap; Superlattices; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929011
