Title :
InAs nanostructure devices fabricated by AFM oxidation process
Author :
Sasa, S. ; Inoue, M.
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Abstract :
We describe atomic force microscope (AFM) oxidation processes developed for nanofabrication of InAs/(Al)GaSb heterostructures. The fabrication process is based on anodization that occurs between the AFM tip and the semiconductor surfaces. We systematically studied the oxidation characteristics and nanofabrication capabilities for each constituent material in order to develop a simple fabrication processes utilizing AFM oxidation. Device characteristics verifying the nanofabrication capability for each AFM oxidation process are described
Keywords :
III-V semiconductors; anodisation; atomic force microscopy; indium compounds; nanotechnology; oxidation; semiconductor heterojunctions; InAs nanostructure device; InAs-AlGaSb; InAs-GaSb; InAs/AlGaSb heterostructure; InAs/GaSb heterostructure; anodization; atomic force microscope oxidation; nanofabrication; semiconductor surface; Atomic force microscopy; Electron mobility; Etching; Fabrication; Gallium arsenide; Intrusion detection; Nanofabrication; Nanoscale devices; Oxidation; Scanning probe microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929012
