Epitaxial growth and amphoteric doping on GaAs (n11)A-oriented substrates

Author

Vaccaro, Pablo O.

Author_Institution

ATR Adaptive Commun. Res. Labs., Kyoto, Japan

fYear

2001

fDate

2001

Firstpage

47

Lastpage

50

Abstract

Silicon is widely used as an n-type dopant in GaAs growth by molecular beam epitaxy. However, silicon atoms can be incorporated as acceptors when the substrate is GaAs (n11)A-oriented and n=<3. Moreover, the conduction type can be controlled by adjusting substrate temperature and V/III flux ratio during the growth. Lateral p-n junctions formed at the intersection of different surface orientations can be obtained on patterned substrates. Surface orientations and crystal growth dynamics show a complex interplay that determines the properties of the junctions. Various types of devices based on these lateral p-n junctions, such as light emitting diodes, laser diodes, photodetectors, tunnel diodes and transistors have been proposed and realized. These devices show many peculiarities, and some of them could be advantageous as compared to conventional structures

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; p-n junctions; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; substrates; GaAs substrate; GaAs:Si; amphoteric doping; crystal growth; laser diode; lateral p-n junction; light emitting diode; molecular beam epitaxy; photodetector; silicon acceptor; surface orientation; transistor; tunnel diode; Atomic layer deposition; Doping; Epitaxial growth; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; P-n junctions; Silicon; Substrates; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929015

Filename

929015