• DocumentCode
    3180480
  • Title

    Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters

  • Author

    Deppe, D.G. ; Cao, C. ; Shchekin, O.B. ; Zou, Z. ; Chen, H. ; Boggess, T.F. ; Zhang, L. ; Gundogdu, K.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of ~1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of ~7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition
  • Keywords
    III-V semiconductors; carrier relaxation time; excited states; gallium arsenide; ground states; indium compounds; microcavity lasers; photoluminescence; quantum well lasers; semiconductor quantum dots; 0-dimensional ground state; InAs; InAs QDs; InGaAs; InGaAs QDs; QD size dependence; QD wetting layer; charge carrier energy relaxation; closely spaced energy levels; first excited radiative transition; ground state transition; lasers; microcavity light emitters; photoluminescence rise time; pump dependence; radiative emission; relaxation time; self-organized QDs; widely spaced energy levels; Charge carriers; Energy states; Indium gallium arsenide; Laser applications; Light emitting diodes; Microcavities; Quantum dot lasers; Stationary state; Temperature dependence; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929023
  • Filename
    929023