Perspective for large semi-insulating indium phosphide substrates

Author

Ware, Rowland

Author_Institution

M/A-COM Inc., Lowell, MA, USA

fYear

2001

fDate

2001

Firstpage

121

Lastpage

124

Abstract

The increasing use of InP for microwave and millimeter wave devices requires an assured supply of good quality 3 inch and 100 mm semi-insulating substrates. This paper considers the current availability of such wafers, the raw material situation and the properties of wafers grown by different processes. It includes a detailed discussion of ingot annealing and the advantages it offers in terms of material uniformity and reduced breakages. It is suggested that the improvement in electrical uniformity is obtained by the redistribution of the defect V_In-H₄. Improvements in quality and reduction in price should occur as production volume increases

Keywords

III-V semiconductors; annealing; indium compounds; microwave materials; substrates; 100 mm; 3 inch; InP; V_In-H₄ defect distribution; electrical uniformity; ingot annealing; microwave device; millimeter-wave device; raw material; semi-insulating indium phosphide substrate; volume production; wafer growth; Gallium arsenide; Gallium compounds; III-V semiconductor materials; Indium phosphide; Light emitting diodes; Manufacturing; Microwave devices; Millimeter wave devices; Raw materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929033

Filename

929033