DocumentCode
31808
Title
Study of Excess Noise Factor Under Nonlocal Effect in Avalanche Photodiodes
Author
Sun, Wen ; Zheng, Xiaoquan ; Campbell, Joe C.
Author_Institution
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Volume
26
Issue
21
fYear
2014
fDate
Nov.1, 1 2014
Firstpage
2150
Lastpage
2153
Abstract
Avalanche photodiodes with thin multiplication regions exhibit a linear relationship between F(M) and M, which differs from the local-field model. This letter presents a study of the relationship between F(M) with M when nonlocal effects are significant. Systematic Monte Carlo simulations on different avalanche photodiodes have been carried out to support the analytical model.
Keywords
Avalanche photodiodes; Impact ionization; Monte Carlo methods; Noise; Avalanche photodiode; Monte Carlo simulation; excess noise factor; impact ionization;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2014.2348914
Filename
6879478
Link To Document