DocumentCode :
31808
Title :
Study of Excess Noise Factor Under Nonlocal Effect in Avalanche Photodiodes
Author :
Sun, Wen ; Zheng, Xiaoquan ; Campbell, Joe C.
Author_Institution :
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
Volume :
26
Issue :
21
fYear :
2014
fDate :
Nov.1, 1 2014
Firstpage :
2150
Lastpage :
2153
Abstract :
Avalanche photodiodes with thin multiplication regions exhibit a linear relationship between F(M) and M, which differs from the local-field model. This letter presents a study of the relationship between F(M) with M when nonlocal effects are significant. Systematic Monte Carlo simulations on different avalanche photodiodes have been carried out to support the analytical model.
Keywords :
Avalanche photodiodes; Impact ionization; Monte Carlo methods; Noise; Avalanche photodiode; Monte Carlo simulation; excess noise factor; impact ionization;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2348914
Filename :
6879478
Link To Document :
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