DocumentCode
3180815
Title
Micro-Raman analysis of molar fraction in polycrystalline Inx Ga1-x for traveling liquidus zone growth method
Author
Islam, M.R. ; Verma, Prabhat ; Yamada, M. ; Tatsumi, M. ; Kinoshita, K.
Author_Institution
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
fYear
2001
fDate
2001
Firstpage
129
Lastpage
132
Abstract
InxGa1-xAs is a tunable lattice matched bulk substrate material for fabricating InGaAs-based optoelectronic devices. Spatial homogeneity in molar fraction for such substrates is essential. It is planned to grow compositionally homogeneous InxGa1-xAs bulk substrate using InxGa 1-xAs polycrystals with graded molar fraction profile as the starting material in the traveling liquidus zone growth method. To analyze these starting materials, particularly the molar fraction, non-destructive techniques are essential. In this paper, we report some results on micro-Raman studies in these polycrystalline starting materials with various values of molar fraction, and a polycrystalline InxGa1-xAs cylindrical sample with graded molar fraction profile. Estimated molar fraction using Raman scattering for various polycrystalline samples show good agreements with those examined by chemical analysis. We further report the effect of surface condition on our results, using micro-Raman technique
Keywords
III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; semiconductor growth; zone melting; InxGa1-x polycrystalline single crystal; InGaAs; InGaAs optoelectronic device; chemical analysis; compositional homogeneity; micro-Raman scattering; molar fraction; nondestructive technique; traveling liquidus zone growth; tunable lattice matched bulk substrate material; Chemical analysis; Crystalline materials; Crystals; Indium gallium arsenide; Lattices; Optical materials; Optical scattering; Optoelectronic devices; Raman scattering; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929046
Filename
929046
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