Title :
Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching
Author :
Hamamoto, Kiichi ; Gini, E. Milio ; Melchio, Hans
Author_Institution :
Syst. Devices & Fundamental Res., NEC Corp., Tsukuba, Japan
Abstract :
Inductively coupled plasma (ICP) etching technique was applied to fabricate high power InP/InGaAsP buried-hetero structure laser diodes. Low internal losses of 6 cm-1 and internal quantum efficiencies of 83%, which resulted in high power of 290 mW output, were obtained under extremely fast mesa-etching with 1.2 μm/min
Keywords :
III-V semiconductors; buried layers; gallium arsenide; gallium compounds; indium compounds; optical losses; quantum well lasers; semiconductor heterojunctions; sputter etching; 290 mW; 83 percent; InP-InGaAsP; buried-hetero structure laser diodes; extremely fast mesa-etching; inductively coupled plasma etching; internal quantum efficiencies; low internal loss InP/InGaAsP laser diodes; Diode lasers; Dry etching; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical coupling; Optical device fabrication; Optical waveguides; Plasma applications; Plasma devices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929053
