Title :
InP/InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer
Author :
Raburn, M.A. ; Liu, B. ; Okuno, Y. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A vertically coupled InP/InGaAsP crossed waveguide optical add-drop multiplexer (OADM) has been realized through the use of wafer bonding. Designed for signals in the 1550-nm range, this novel device requires only a single epitaxial growth and illustrates the use of vertical optical interconnects for the three-dimensional routing of optical signals. To our knowledge, it is also one of the first optical vertically coupled devices with no horizontally coupled counterpart
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; multiplexing equipment; optical interconnections; wafer bonding; wavelength division multiplexing; 1550 nm; 3D photonic integrated circuits; InP-InGaAsP; WDM; single epitaxial growth; three-dimensional optical signal routing; vertical optical interconnects; vertically coupled InP/InGaAsP crossed waveguide optical add-drop multiplexer; vertically coupled waveguides; wafer bonding; Epitaxial growth; Indium phosphide; Optical add-drop multiplexers; Optical coupling; Optical design; Optical devices; Optical interconnections; Optical waveguides; Signal design; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929067
