Title :
A35 GHz monolithic MESFET LNA
Author :
Bandla, S. ; Dawe, G. ; Bedard, C. ; Tayrani, R. ; Shaw, D. ; Raffaelli, L. ; Goldwasser, R.
Author_Institution :
Gamma Monolithics, Woburn, MA, USA
Abstract :
The design and fabrication of a state-of-the-art 35-GHz monolithic amplifier is briefly described. The amplifier with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression is based on a 0.25*200- mu m molecular-beam-epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented.<>
Keywords :
Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; molecular beam epitaxial growth; 35 GHz; 4 dB; 6.5 dB; circuit design; fabrication; low-noise amplifier; molecular-beam-epitaxy; monolithic MESFET LNA; monolithic amplifier; test results; Circuit testing; Fabrication; Gain; Gallium arsenide; Gold; MESFETs; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22026
