Title :
0.1 μm enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT
Author :
Grundbacher, R. ; Lai, R. ; Barskey, M. ; Chen, Y.C. ; Tsai, R. ; Dia, R.M. ; Tran, L. ; Chin, T.P. ; Block, T. ; Oki, A.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We present state-of-the-art performance of 0.1 μm enhancement-mode (E-mode) pseudomorphic InGaAs/InAlAs/InP HEMTs fabricated on 3-inch wafers in a production environment. The E-mode HEMTs have a cutoff frequency of 210 GHz, transconductance of 1180 mS/mm, and less than 1 mA/mm Idss (drain current at a gate bias of zero volts), measured at a drain bias of 1 V. The device characteristics make the E-mode HEMTs suitable candidates for ultra-high-speed digital and analog applications. Low noise amplifiers utilizing E-mode HEMTs, which were fabricated on 3-inch wafers in TRW´s InP production line, demonstrated excellent repeatability, performance, yield and uniformity
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; microwave field effect transistors; 0.1 mum; 1180 mS/mm; 210 GHz; 3 inch; 3-inch wafers; E-mode HEMTs; InGaAs-InAlAs-InP; cutoff frequency; drain current; enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT; low noise amplifiers; production environment; repeatability; transconductance; ultra-high-speed analog applications; ultra-high-speed digital applications; uniformity; yield; Current measurement; Cutoff frequency; Frequency measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Production; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929087
