Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature

Author

Yang, Hong ; Wang, Hong ; Ing Ng, Geok ; Zheng, Haiqun ; Radhakrishnan, K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

2001

fDate

2001

Firstpage

200

Lastpage

203

Abstract

A detailed DC characterization of metamorphic InP/InGaAs/InP DHBT´s in the temperature range of 300 K to 400 K was carried out and the carrier transport properties were investigated. Our experiments reveal that band-to-band recombination is the dominant mechanism for the base current indicating the good base material quality for the metamorphic HBT structures

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-temperature electronics; indium compounds; semiconductor device measurement; 300 to 400 K; DC characterization; DC current gain; Gummel plots; InP-InGaAs-InP; band-to-band recombination; base current; base material quality; carrier transport properties; collector currents; common-emitter I-V characteristics; elevated temperature; metamorphic InP/InGaAs/InP DHBT; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Performance gain; Probes; Temperature dependence; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929092

Filename

929092