InGaP/GaAs DHBTs with composite collectors for power amplifiers

Author

Hsin, Yue-Ming ; Lin, Chih-Hsien ; Fan, Chang-Chung ; Su, Shih-Tzung ; Yang, Michael H T ; Huang, James C H ; Lin, Kun-Chuan

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan

fYear

2001

fDate

2001

Firstpage

208

Lastpage

211

Abstract

InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collectors have been proposed, simulated and fabricated for power amplifier applications in wireless communication. The composite collector combines wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. InGaP provides a high breakdown field and thus can be employed to reduce collector thickness while maintaining breakdown voltage. GaAs provides high electron mobility and thus is able to be used to reduce on-resistance and transit time. Three InGaP/GaAs HBTs with different collector structures have been grown, fabricated and characterized. The Gummel plots from simulation and measurement for the proposed DHBT show negligible difference in current gains, which is due to the identical structures in base/emitter regions and effectively reduced conduction spike in the base-collector junction. Overall, this DHBT with displays improved performance in on-resistance and knee voltage

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power amplifiers; power bipolar transistors; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; Gummel plots; InGaP-GaAs; InGaP/GaAs DHBTs; base-collector junction; base/emitter regions; breakdown field; breakdown voltage; collector structures; collector thickness; composite collectors; conduction spike; current gain; double heterojunction bipolar transistors; electron mobility; knee voltage; narrow-bandgap material; on-resistance; power amplifiers; simulation; transit time; wide-bandgap material; wireless communication; Breakdown voltage; Broadband amplifiers; Composite materials; Current measurement; Double heterojunction bipolar transistors; Electron mobility; Gain measurement; Gallium arsenide; Power amplifiers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929094

Filename

929094