• DocumentCode
    3181583
  • Title

    QD-lasers up to and beyond 1300 nm

  • Author

    Bimberg, D.

  • Author_Institution
    Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
  • fYear
    1999
  • fDate
    26-27 July 1999
  • Abstract
    Clear advantages of quantum dot lasers are evident for high power applications for /spl lambda//spl ges/1.1 /spl mu/m range. These diodes are needed as pump sources for rare-earth-doped fiber lasers, which are the compact sources of blue-green light. The required wavelength is however beyond the reach of classical InGaAs/GaAs QW-based lasers. At the same time this wavelength can be easily achieved with InGaAs/GaAs QDs. Furthermore, the reduced facet overheating helps to prevent catastrophical optical damage at high output powers. The author presents a study of an Al-free InGaAs/GaAs QD laser for /spl lambda/=1.1 /spl mu/m grown by MOCVD.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; optical losses; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.1 mum; 1300 nm; GaAs; InGaAs-GaAs; InGaAs/GaAs quantum dot lasers; MOCVD; blue-green light; catastrophical optical damage; compact sources; high output powers; high power applications; pump sources; quantum dot lasers; rare-earth-doped fiber lasers; reduced facet overheating; Diodes; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical pumping; Power generation; Power lasers; Pump lasers; Quantum dot lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    0-7803-5633-0
  • Type

    conf

  • DOI
    10.1109/LEOSST.1999.794633
  • Filename
    794633