Title :
Nonlinear terahertz gain estimated from multiple photon-assisted tunneling in resonant tunneling diode
Author :
Asada, M. ; Sashinaka, N.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
Abstract :
We report power-dependent terahertz (THz) gain due to inter-quantum well subband transitions estimated from current change under THz irradiation in resonant tunneling diodes (RTDs) integrated with patch antennas. Due to large THz field induced across RTDs, multi-photon processes and rapid reduction of the gain with incident power were obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microstrip antennas; multiphoton processes; resonant tunnelling diodes; semiconductor quantum wells; submillimetre wave diodes; GaInAs-InAlAs; GaInAs/InAlAs triple-barrier RTD; RTD integration; THz irradiation; current change; inter-quantum well subband transitions; multiple photon-assisted tunneling; nonlinear terahertz gain; patch antennas; rapid gain reduction; resonant tunneling diode; Absorption; Diodes; Electron devices; Laser transitions; Patch antennas; Power engineering and energy; Quantum well lasers; Resonant tunneling devices; Stimulated emission; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929102
