Title :
Fast migration of plasma-induced defects in p-InP
Author :
Okumura, Tsugunori ; Honda, Takanori ; Suhara, Michihiko
Author_Institution :
Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan
Abstract :
We investigated the electrical properties of plasma-induced defects in p-InP:Zn and discussed the migration mechanism of the defects. Two kinds of defects were responsible for the deactivation (or compensation) of the doped acceptors, when the sample was exposed to an Ar plasma. They migrate into the bulk region even at room temperature. One of them is tentatively identified as a hydrogen atom deliberately introduced into the crystal during processing. The other one consists of intrinsic point defect(s) due to displacement of constituent atoms. The intrinsic point defects could be frozen and become immobile at the surface by quenching at 77 K. The migration parameters for these defects are determined by performing reverse-bias-anneal (RBA) experiments in comparison with the simulation based on the defect reaction and drift-diffusion model
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; deep levels; defect states; diffusion; impurity-defect interactions; indium compounds; plasma materials processing; point defects; zinc; 13.56 MHz; 77 K; Ar plasma; InP:Zn; RF plasma system; acceptor compensation; acceptor deactivation; constituent atom displacement; defect migration mechanism; defect reaction simulation; doped acceptors; drift-diffusion model; electrical properties; hydrogen atom; intrinsic point defects; p-InP:Zn; plasma-induced defects; quenching; reverse-bias-anneal experiments; room temperature; Argon; Fabrication; Hydrogen; Indium phosphide; Mechanical factors; Plasma devices; Plasma materials processing; Plasma properties; Plasma temperature; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929107
