DocumentCode
3181722
Title
PIN diode limiter spike leakage, recovery time, and damage
Author
Tan, R.J. ; Ward, A.L. ; Garver, R.V. ; Brisker, H.
Author_Institution
Harry Diamond Lab., Adelphi, MD, USA
fYear
1988
fDate
25-27 May 1988
Firstpage
275
Abstract
A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<>
Keywords
limiters; solid-state microwave circuits; 0.5 to 10 micron; PIN diode limiter; X-band; damage; input power; intrinsic region; recovery time; spike leakage; thickness; Antenna accessories; Diodes; Microstrip; Packaging; Protection; Radar antennas; Receiving antennas; Switches; Thickness measurement; Transmitting antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22029
Filename
22029
Link To Document