Title :
PIN diode limiter spike leakage, recovery time, and damage
Author :
Tan, R.J. ; Ward, A.L. ; Garver, R.V. ; Brisker, H.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
Abstract :
A predominantly experimental study was performed on p-i-n diode limiter spike leakage, and some preliminary recovery time and damage level results are discussed. Dependencies on the thickness of the intrinsic region (0.5 to 10 mu m) and input power at X-band are given.<>
Keywords :
limiters; solid-state microwave circuits; 0.5 to 10 micron; PIN diode limiter; X-band; damage; input power; intrinsic region; recovery time; spike leakage; thickness; Antenna accessories; Diodes; Microstrip; Packaging; Protection; Radar antennas; Receiving antennas; Switches; Thickness measurement; Transmitting antennas;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22029
