Title :
InAs quantum dot growth by APMOCVD
Author :
Yeoh, T.S. ; Swint, R.B. ; Coleman, J.J. ; Liu, C.P.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Although the majority of InAs quantum dots are currently grown on MBE and LPMOCVD systems, investigations into quantum dots grown by APMOCVD are virtually nonexistent. Growth parameters for InAs quantum dots using MOCVD are limited by both the pyrolysis efficiencies of the metalorganics at temperatures below 500/spl deg/C as well as monatomic hydrogen from AsH/sub 3/ possibly leading to increased surface mobilities of the InAs dots. We report on InAs quantum dots deposited on GaAs grown by APMOCVD at 450/spl deg/C.
Keywords :
III-V semiconductors; MOCVD; indium compounds; semiconductor growth; semiconductor quantum dots; 450 C; 500 C; APMOCVD; AsH/sub 3/; GaAs; InAs; InAs quantum dot growth; growth parameters; metalorganics; pyrolysis efficiencies; quantum dots; surface mobilities; temperatures; Buffer layers; Capacitive sensors; Gallium arsenide; Hydrogen; Laboratories; MOCVD; Microelectronics; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794644
