Title :
MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs
Author :
Liu, W.K. ; Lubyshev, D. ; Wu, Y. ; Fang, X.-M. ; Yurasits, T. ; Cornfeld, A.B. ; Mensa, D. ; Jaganathan, S. ; Pullela, R. ; Dahlström, M. ; Sundararajan, P.K. ; Mathew, T. ; Rodwell, M.
Abstract :
InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 Å and doped at 4×1019 cm-3 were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar DC characteristics. No significant difference in current gain or linearity was observed for metamorphic devices compared to their lattice-matched counterparts
Keywords :
III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor growth; 500 angstrom; Be-doped large-area devices; C-doped large-area devices; DC characteristics; GaAs; GaAs substrates; InAlAs-InGaAs:Be-InP; InAlAs-InGaAs:C-InP; InAlAs/InGaAs/InP HBT; InP; InP substrates; MBE growth; breakdown voltage; current gain; fiber-optic telecommunication products; frequency response; generic structures; lattice-matched HBT; linearity; metamorphic HBT; molecular beam epitaxy; wireless telecommunication; Frequency response; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Linearity; Molecular beam epitaxial growth; Optical fiber devices; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929113
