• DocumentCode
    3181874
  • Title

    InP based materials for long wavelength optoelectronics grown in a multiwafer AIX 2400G3 Planetary Reactor(R)

  • Author

    Schmitt, T. ; Deufel, M. ; Daulesberg, M. ; Heuken, M. ; Juergensen, H.

  • Author_Institution
    AIXTRON AG, Aachen, Germany
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    307
  • Lastpage
    309
  • Abstract
    In this paper reactor simulations and results of the growth of InP based materials (GaxIn1-xAsyP1-y ) in a Planetary Reactor(R) will be shown. The reactor that has been used was an AIX 2400G3 system in the 8×3 inch configuration using 2 inch recesses
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optoelectronic devices; semiconductor growth; semiconductor process modelling; semiconductor quantum wells; 2 inch; 3 inch; 8 inch; GaxIn1-xAsyP1-y; GaInAsP; InP; InP based materials; MOCVD; MQW; long wavelength optoelectronics; multiwafer AIX 2400G3 Planetary Reactor; reactor simulations; Computational modeling; Electromagnetic heating; Heat transfer; Indium phosphide; Inductors; MOCVD; Production; Semiconductor device modeling; Semiconductor materials; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929119
  • Filename
    929119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3181874