DocumentCode :
3181874
Title :
InP based materials for long wavelength optoelectronics grown in a multiwafer AIX 2400G3 Planetary Reactor(R)
Author :
Schmitt, T. ; Deufel, M. ; Daulesberg, M. ; Heuken, M. ; Juergensen, H.
Author_Institution :
AIXTRON AG, Aachen, Germany
fYear :
2001
fDate :
2001
Firstpage :
307
Lastpage :
309
Abstract :
In this paper reactor simulations and results of the growth of InP based materials (GaxIn1-xAsyP1-y ) in a Planetary Reactor(R) will be shown. The reactor that has been used was an AIX 2400G3 system in the 8×3 inch configuration using 2 inch recesses
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; optoelectronic devices; semiconductor growth; semiconductor process modelling; semiconductor quantum wells; 2 inch; 3 inch; 8 inch; GaxIn1-xAsyP1-y; GaInAsP; InP; InP based materials; MOCVD; MQW; long wavelength optoelectronics; multiwafer AIX 2400G3 Planetary Reactor; reactor simulations; Computational modeling; Electromagnetic heating; Heat transfer; Indium phosphide; Inductors; MOCVD; Production; Semiconductor device modeling; Semiconductor materials; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
ISSN :
1092-8669
Print_ISBN :
0-7803-6700-6
Type :
conf
DOI :
10.1109/ICIPRM.2001.929119
Filename :
929119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3181874
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