Title :
Study of GaAs[001] surface with adsorbed oxygen
Author :
Kasai, Y. ; Yamamura, Y. ; Inokuma, T. ; Iiyama, K. ; Takamiya, S.
Author_Institution :
Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan
Abstract :
The authors have investigated the effect of pretreatment by pH-controlled chemicals on Schottky barrier heights of Ni/n-GaAs junctions. An X-ray photoelectron spectroscopy (XPS) analysis of the treated surface suggested that difference in surface oxygen densities is the cause of the different electrical characteristics. The electronic states of GaAs(001) surfaces with and without adsorbed oxygen atoms were studied using first-principle calculations and compared with experimental results of Ni/n-GaAs(001) Schottky junctions
Keywords :
III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; adsorbed layers; gallium arsenide; nickel; semiconductor-metal boundaries; surface states; GaAs; Ni-GaAs; Ni/n-GaAs junctions; O; Schottky barrier height; X-ray photoelectron spectroscopy; XPS analysis; adsorbed O; electrical characteristics; first-principle calculations; pH-controlled chemicals; surface electronic states; surface oxygen densities; surface pretreatment; Chemical technology; Electric variables; Extraterrestrial measurements; Gallium arsenide; Oxygen; Pollution measurement; Schottky barriers; Spectroscopy; Surface treatment; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929122
