Title :
Internal electric field effects at ordered Ga0.5In0.5P/GaAs heterointerface investigated by photoreflectance spectroscopy
Author :
Yamashita, K. ; Nishida, N. ; Kakutani, T. ; Kita, T. ; Wang, Y. ; Murase, K. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
We performed photoreflectance (PR) and Raman-scattering measurements of long-range ordered Ga0.5In0.5P/GaAs heterointerfaces to investigate effects of the internal electric field on the carrier-modulation mechanism. The PR spectrum of an ordered Ga0.5In0.5P/GaAs heterointerface shows the Franz-Keldysh oscillation due to a strong internal electric field. However, the PR-signal amplitude for the ordered sample is ~1/20 of that for a disordered sample. Raman-scattering results of the ordered Ga0.5In0.5P/GaAs heterointerfaces reveal plasmon-phonon coupled modes due to the spontaneous electron accumulation. We suggest that the electron accumulation reduces the mean electric field for the PR modulation
Keywords :
III-V semiconductors; Raman spectra; gallium arsenide; gallium compounds; indium compounds; interface phonons; interface states; phonon-plasmon interactions; photoreflectance; semiconductor epitaxial layers; semiconductor heterojunctions; visible spectra; Franz-Keldysh oscillation; Ga0.5In0.5P-GaAs; PR-signal amplitude; Raman scattering; carrier-modulation mechanism; disordered sample; internal electric field effects; ordered Ga0.5In0.5P/GaAs heterointerface; photoreflectance spectroscopy; plasmon-phonon coupled modes; spontaneous electron accumulation; Electron optics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Laser excitation; Metallic superlattices; Optical devices; Optical superlattices; Performance evaluation;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929125
