Gas source MBE growth of TlInGaAs layers on GaAs substrates

Author

Lee, H.-J. ; Mizobata, A. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Asahi, H.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2001

fDate

2001

Firstpage

346

Lastpage

349

Abstract

New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 μm wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; red shift; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; thallium compounds; 1.3 to 1.55 mum; DH structures; GaAs; GaAs substrates; InGaAs-GaAs; InGaAs/GaAs structures; RHEED intensity oscillation; Tl incorporation; TlInGaAs layers; TlInGaAs-GaAs; TlInGaAsN-AlGaAs; TlInGaAsN/AlGaAs heterostructures; gas source MBE growth; laser diodes; multi-hetero structures; photoluminescence peak energy; red shift; temperature-stable lasing wavelengths; temperature-stable threshold currents; DH-HEMTs; Diode lasers; Electrons; Gallium arsenide; High definition video; Indium gallium arsenide; Molecular beam epitaxial growth; Optical reflection; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929129

Filename

929129