Title :
Gas source MBE growth of TlInGaAs layers on GaAs substrates
Author :
Lee, H.-J. ; Mizobata, A. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 μm wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; red shift; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; thallium compounds; 1.3 to 1.55 mum; DH structures; GaAs; GaAs substrates; InGaAs-GaAs; InGaAs/GaAs structures; RHEED intensity oscillation; Tl incorporation; TlInGaAs layers; TlInGaAs-GaAs; TlInGaAsN-AlGaAs; TlInGaAsN/AlGaAs heterostructures; gas source MBE growth; laser diodes; multi-hetero structures; photoluminescence peak energy; red shift; temperature-stable lasing wavelengths; temperature-stable threshold currents; DH-HEMTs; Diode lasers; Electrons; Gallium arsenide; High definition video; Indium gallium arsenide; Molecular beam epitaxial growth; Optical reflection; Substrates; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929129
