Title :
Well number dependence of highly strained GaIn(N)As MQW structures by metalorganic chemical vapor deposition
Author :
Jikutani, Naoto ; Sato, Shunichi ; Takahashi, Takashi ; Itoh, Akihiro ; Satoh, Shiro
Author_Institution :
Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
Abstract :
Highly strained GaInAs/GaAs MQWs (SQW, DQW, TQW) were grown by MOCVD and highly strained GaInNAs/GaAs lasers (SQW, TQW) grown by MOCVD were fabricated to evaluate their characteristics difference by well number. A low threshold current density of 541 A/cm2 and a lasing wavelength of 1.276 μm were obtained in a 2070 μm-cavity length SQW laser. A threshold current density of 1.46 k A/cm2 and a lasing wavelength of 1.296 μm were obtained in a 1140 μm-cavity length TQW laser under pulse operation at room temperature
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; internal stresses; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; spectral line intensity; 1.276 mum; 1.296 mum; 1140 mum; 2070 mum; DQW; GaInAs-GaAs; GaInNAs-GaAs; MOCVD; PL intensity; SQW; SQW laser; TQW; TQW laser; highly strained GaIn(N)As MQW structures; highly strained GaInAs/GaAs MQWs; highly strained GaInNAs/GaAs lasers; lasing wavelength; metalorganic chemical vapor deposition; photoluminescence; pulse operation; room temperature; threshold current density; well number dependence; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929130
