Electronic structures of Ga1-xInxNyAs1-y/GaAs compressively strained quantum wells

The electronic structures of the Ga_1-xIn_xN _yAs_1-y/GaAs compressive strained quantum wells (QWs) are investigated using a 6×6 k·p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves and TE and TM squared optical transition matrix elements of three possible quantum well structures for emission at 1.3 μm are given