Title :
Optical gain in InGaAs/GaAs self-assembled quantum dots and its effect on optical devices
Author :
Sugawara, M. ; Hatori, N. ; Akiyama, T. ; Nakata, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
This paper presents theoretical and experimental studies on the optical gain of self-assembled InGaAs/GaAs quantum dots: homogeneous broadening of single-dot optical gain and its effect on lasing spectra, the magnitude of gain as a function of current, ultrafast gain recovery, and a comprehensive theory. Based on the results, we developed an operation theory of traveling-type quantum-dot semiconductor optical amplifiers to demonstrate that they can process high-bit-rate multiple-wavelength optical signals over 40 Gbit/s under gain saturation. This promises diverse optical functional devices, which meet with the demand of next-generation broadband all-optical photonic networks
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pulse compression; optical pulse shaping; optical saturable absorption; quantum well lasers; self-assembly; semiconductor optical amplifiers; semiconductor quantum dots; spectral line broadening; 40 Gbit/s; InGaAs-GaAs; InGaAs/GaAs self-assembled quantum dots; gain saturation; high-bit-rate multiple-wavelength optical signal processing; homogeneous broadening; lasing spectra; next-generation broadband all-optical photonic networks; operation theory; optical devices; optical functional devices; optical gain; single-dot optical gain; traveling-type quantum-dot semiconductor optical amplifiers; ultrafast gain recovery; Gallium arsenide; Indium gallium arsenide; Optical devices; Optical saturation; Quantum dots; Quantum mechanics; Semiconductor optical amplifiers; Signal processing; Stimulated emission; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929132