Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InP grating

Author

Takemoto, D. ; Nakahara, K. ; Tsuchiya, T. ; Sudoh, T.K. ; Tsuji, S.

Author_Institution

Central Res. Labs., Hitachi Ltd., Tokyo, Japan

fYear

2001

fDate

2001

Firstpage

394

Lastpage

397

Abstract

We grew a strained-InGaAlAs multiple quantum well (MQW) by low-pressure MOVPE over an InGaAsP grating on InP to fabricate an InGaAlAs-distributed-feedback (DFB) laser diode (LD). InP was overgrown on the grating in PH₃ ambient. We found that temperature, growth rate, and PH₃, partial pressure in the InP overgrowth process are the key parameters in growing dislocation-free epitaxial layers. By adjusting these parameters, we successfully grew a dislocation-free strained InGaAlAs MQW over a grating

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InGaAlAs; InGaAlAs distributed feedback laser diode; InGaAlAs strained multiple quantum well structure; InGaAsP-InP; InGaAsP/InP grating; InP overgrowth; dislocation-free epitaxial layer; fabrication; low-pressure MOVPE growth; Ash; Diode lasers; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Quantum well devices; Shape; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929141

Filename

929141