Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy

Author

Oga, R. ; Yamamoto, S. ; Ohzawa, I. ; Fujiwara, Y. ; Takeda, Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan

fYear

2001

fDate

2001

Firstpage

405

Lastpage

408

Abstract

We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas

Keywords

III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 4.2 K; InAs; InAs quantum dot; InP; InP nanopyramid; droplet heteroepitaxial growth; photoluminescence; selective area flow rate modulation epitaxy; Atom optics; Epitaxial growth; Indium phosphide; Inductors; Luminescence; Photoluminescence; Quantum dots; Size control; Substrates; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929144

Filename

929144