Title :
Highly strained GaInAs/GaAs QW for 1.2 /spl mu/m surface emitting lasers
Author :
Koyama, F. ; Schlenker, D. ; Miyamoto, T. ; Chen, Z. ; Matsutani, A. ; Sakaguchi, T. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We discuss a possibility of high performance VCSELs emitting at 1.2 /spl mu/m wavelength for high speed single mode fiber datacom. Good temperature characteristics of highly strained GaInAs-GaAs QW edge emitting lasers are demonstrated under "heatsink-free" cw operations.
Keywords :
III-V semiconductors; data communication; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.2 mum; GaInAs-GaAs; good temperature characteristics; heatsink-free cw operations; high performance VCSELs; high speed single mode fiber datacom; highly strained GaInAs-GaAs QW 1.2 /spl mu/m surface emitting lasers; highly strained GaInAs-GaAs QW edge emitting lasers; Data communication; Fiber lasers; Gallium arsenide; Laboratories; Laser modes; Quantum dot lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794697
