DocumentCode
3182523
Title
Single-pulse RF damage of GaAs FET amplifiers
Author
McAdoo, J.H. ; Bollen, W.M. ; Garver, R.V.
Author_Institution
Mission Res. Corp., Newington, VA, USA
fYear
1988
fDate
25-27 May 1988
Firstpage
289
Abstract
Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<>
Keywords
III-V semiconductors; field effect integrated circuits; field effect transistors; microwave integrated circuits; FET amplifiers; GaAs; MMIC; circuit input terminals; damage characteristics; microwave monolithic integrated circuit; microwave power; single pulses; Circuit testing; Gallium arsenide; MMICs; Microwave FETs; Microwave amplifiers; Monolithic integrated circuits; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MWSYM.1988.22033
Filename
22033
Link To Document