Title :
Single-pulse RF damage of GaAs FET amplifiers
Author :
McAdoo, J.H. ; Bollen, W.M. ; Garver, R.V.
Author_Institution :
Mission Res. Corp., Newington, VA, USA
Abstract :
Several GaAs MMIC (microwave monolithic integrated circuit) amplifiers have been tested for damage from single pulses of microwave power applied to the circuit input terminals. Damage characteristics are described and modeled.<>
Keywords :
III-V semiconductors; field effect integrated circuits; field effect transistors; microwave integrated circuits; FET amplifiers; GaAs; MMIC; circuit input terminals; damage characteristics; microwave monolithic integrated circuit; microwave power; single pulses; Circuit testing; Gallium arsenide; MMICs; Microwave FETs; Microwave amplifiers; Monolithic integrated circuits; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22033
